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2003-11-06 page 1 spw47N60C3 cool mos? power transistor v ds @ t j ma x 650 v r ds ( on ) 0.07 ? i d 47 a feature ? new revolutionary high voltage technology ? worldwide best r ds ( on ) in to 247 ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances p-to247 type package ordering code spw47N60C3 p-to247 q67040-s4491 marking 47N60C3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 47 30 a pulsed drain current, t p limited by t j ma x i d p uls 141 avalanche energy, single pulse i d = 10 a, v dd = 50 v e as 1800 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 20 a, v dd = 50 v e ar 1 avalanche current, repetitive t a r limited by t j ma x i a r 20 a gate source voltage static v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 415 w operating and storage temperature t j , t st g -55... +150 c
2003-11-06 page 2 spw47N60C3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 47 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 0.3 k/w thermal resistance, junction - ambient, leaded r thja - - 62 soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =20a - 700 - gate threshold voltage v gs ( th ) i d =2700 ? , v gs = v d s 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.5 - 25 250 a gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =30a, t j =25c t j =150c - - 0.06 0.16 0.07 - ? gate input resistance r g f =1mhz, open drain - 0.62 -
2003-11-06 page 3 spw47N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =30a - 40 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 6800 - pf output capacitance c oss - 2200 - reverse transfer capacitance c rss - 145 - effective output capacitance, 2) energy related c o(er) v gs =0v, v ds =0v to 480v - 193 - pf effective output capacitance, 3) time related c o(tr) - 412 - turn-on delay time t d(on) v dd =380v, v gs =0/13v, i d =47a, r g =1.8 ? , t j =125 - 18 - ns rise time t r - 27 - turn-off delay time t d(off) - 111 165 fall time t f - 8 12 gate charge characteristics gate to source charge q gs v dd =350v, i d =47a - 24 - nc gate to drain charge q gd - 121 - gate charge total q g v dd =350v, i d =47a, v gs =0 to 10v - 252 320 gate plateau voltage v (plateau) v dd =350v, i d =47a - 5.5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 3 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2003-11-06 page 4 spw47N60C3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 47 a inverse diode direct current, pulsed i sm - - 141 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 580 - ns reverse recovery charge q rr - 23 - c peak reverse recovery current i rrm - 73 - a peak rate of fall of reverse recovery current di rr / dt - 900 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.002689 k/w r th2 0.005407 r th3 0.011 r th4 0.054 r th5 0.071 r th6 0.036 thermal capacitance c th1 0.001081 ws/k c th2 0.004021 c th3 0.005415 c th4 0.014 c th5 0.025 c th6 0.158 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2003-11-06 page 5 spw47N60C3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 50 100 150 200 250 300 350 400 w 500 spw47N60C3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 3 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 40 80 120 160 200 a 280 i d 4.5v 5v 5.5v 6v 6.5v 7v 7.5v 20v
2003-11-06 page 6 spw47N60C3 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 20 40 60 80 100 120 a 160 i d 4v 4.5v 5v 5.5v 6v 6.5v 20v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 20 40 60 80 100 120 a 160 i d 0.1 0.15 0.2 0.25 0.3 0.35 0.4 ? 0.5 r ds(on) 20v 6.5v 6v 5.5v 5v 4.5v 4v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 47 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 ? 0.38 spw47N60C3 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0 40 80 120 160 200 a 280 i d 25c 150c
2003-11-06 page 7 spw47N60C3 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 47 a pulsed 0 40 80 120 160 200 240 280 320 nc 400 q gate 0 2 4 6 8 10 12 v 16 spw47N60C3 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spw47N60C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 typ. drain current slope d i /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =47a 0 2 4 6 8 10 12 14 16 ? 20 r g 0 1000 2000 3000 4000 a/s 6000 d i /d t di/dt(on) di/dt(off) 12 typ. switching time t = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =47 a 0 2 4 6 8 10 12 14 16 ? 20 r g 0 10 1 10 2 10 3 10 ns t td(on) td(off) tr tf
2003-11-06 page 8 spw47N60C3 13 typ. switching time t = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =1.8 ? 0 10 20 30 a 50 i d -1 10 0 10 1 10 2 10 3 10 ns t td(off) td(on) tr tf 14 typ. drain source voltage slope d v /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =47a 0 2 4 6 8 10 12 14 16 ? 20 r g 0 10 20 30 40 50 60 v/ns 80 d v /d t dv/dt(off) dv/dt(on) 15 typ. switching losses e = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =1.8 ? 0 10 20 30 a 50 i d 0 0.1 0.2 mws 0.4 e eon* eoff *) eon includes sdp06s60 diode commutation losses. 16 typ. switching losses e = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =47a 0 2 4 6 8 10 12 14 16 ? 20 r g 0 0.2 0.4 0.6 0.8 1 mws 1.4 e eon* eoff *) eon includes sdp06s60 diode commutation losses.
2003-11-06 page 9 spw47N60C3 17 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 2 4 6 8 10 12 14 16 a 20 i ar 18 avalanche energy e as = f ( t j ) par.: i d = 10 a, v dd = 50 v 25 50 75 100 c 150 t j 0 200 400 600 800 1000 1200 1400 mj 1800 e as 19 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spw47N60C3 v (br)dss 20 avalanche power losses p ar = f ( f ) parameter: e ar =1mj 10 4 10 5 10 6 hz f 0 100 200 300 - 500 p av
2003-11-06 page 10 spw47N60C3 21 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 1 10 2 10 3 10 4 10 5 10 pf c ciss coss crss 22 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 5 10 15 20 j 30 e oss 23 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d = 2.7 ma -75 -50 -25 0 25 50 75 100 125 c 175 t j 1.25 1.75 2.25 2.75 3.25 v 4.25 v gs(th) max. typ. min.
2003-11-06 page 11 spw47N60C3 definition of diodes switching characteristics
2003-11-06 page 12 spw47N60C3 p-to-247-3-1 6.35 15.9 6.17 9.91 20.9 4.37 5.94 ?3.61 5? 2.97 x 0.127 1.2 2 2.92 5.46 16 2.03 5.03 0.762 max. 2.4 +0.05 41.22 20? d 7 d 1.75 1.14 0.243 general tolerance unless otherwise specified: leadframe parts: 0.05 package parts: 0.12
2003-11-06 page 13 spw47N60C3 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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